LIM, H.N., NURZULAIKHA, R., HARRISON, I., LIM, S.S., TAN, W.T., YEO, M.C., YARMO, M.A., HUANG, N.M., 2012. Preparation and characterization of tin oxide, SnO 2 nanoparticles decorated graphene Ceramics International. 38(5), 4209-4216 XIAO, L., CHOY, K.-L., HARRISON, I., 2011. Co-doped BST thin films for tunable microwave applications Surface and Coatings Technology. 205(8-9), 2989-2993 LIM H.N, NURZULAIKHA, R, HARRISON, I, LIM, SS, TAN, WT and YEO, MC, 2011. Spherical Tin Oxide, SnO(2) Particles Fabricated via Facile Hydrothermal Method for Detection of Mercury (II) Ions INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE. 6(9), 4329-4340
RIDGWAY, L.M., HARRISON, I., 2011. Dielectric resonator antenna using high permittivity bismuth substituted barium hexaferrite Lecture Notes in Electrical Engineering. 99 LNEE(VOL. 3), 1001-1005 RIDGWAY, L.M., HARRISON, I., 2011. High frequency dielectric properties of bismuth substituted barium hexaferrite Lecture Notes in Electrical Engineering. 99 LNEE(VOL. 3), 995-1000 DLUBEK, M. P., KAUNGA-NYIRENDA, S. N., PHILLIPS, A. J., SUJECKI, S., HARRISON, I. and LARKINS, E. C., 2010. Experimental Verification of the Existence of Optically Induced Carrier Pulsations in SOA's Optics Communications. 283(7), 1481 - 1484 WEST, C.P., HARRISON, I., CUSSEN, E.J., GREGORY, D.H., 2009. Facile synthesis of bimetallic carbonitrides, V 1-xTi x(C,N), by microwave carbothermal reduction-ammonolysis/carburisation (MW-CRAC) methods Journal of the European Ceramic Society. 29(11), 2355-2361 DIMITRAKIS, G.A., GEORGE, M., POLIAKOFF, M., HARRISON, I., ROBINSON, J., KINGMAN, S., LESTER, E., GREGORY, A.P., LEES, K., 2009. A system for traceable measurement of the microwave complex permittivity of liquids at high pressures and temperatures Measurement Science and Technology. 20(4), MODHA, K.N., HAYES-GILL, B., HARRISON, I., 2008. Low cost ultra wideband amplifier in 0.35 μm CMOS process Microwave and Optical Technology Letters. 50(7), 1879-1881 SMITH, R.J., SOMEKH, M.G., SHARPLES, S.D., PITTER, M.C., HARRISON, I., ROSSIGNOL, C., 2008. Parallel detection of low modulation depth signals: Application to picosecond ultrasonics Measurement Science and Technology. 19(5), FAY, M.W., HAN, Y., BROWN, P.D., HARRISON, I., HILTON, K.P., MUNDAY, A., WALLIS, D., BALMER, R.S., UREN, M.J., MARTIN, T., 2008. Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaNGaN with varying annealing temperature and Al content Journal of Applied Physics. 103(7), LI, M.X., HAYES-GILL, B.R., CLARK, M., PITTER, M., SOMEKH, M.G. and HARRISON, I., 2007. 5-GHz Optical Front-End for Active Pixel Applications in Standard 0.35-mu m CMOS: art. no. 647708 In: Silicon Photonics II. 6477: 47708-47708 (In Press.)
YAN, F., PHILLIPS, A.J. and HARRISON, I., 2007. The Impact of ASE Noise in Optically Amplified Radio Over Fibre Systems. In: Proceedings of the 12th European Conference on Networks and Optical Communications (NOC) 2007. Kista, Sweden.. 220 - 227
DONG, P., HAYES-GILL, B. and HARRISON, I., 2006. Simple Optimising Methodology for Static Frequency Divider Design Electronics Letters. 42(22), 1267 - 1269 LI, M., HAYES-GILL, B. and HARRISON, I., 2006. 6 GHz Transimpedance Amplifier for Optical Sensing System in Low-Cost 0.35-mm CMOS Electronics Letters. 42(22), 1278 - 1279 MOLDOVAN, G., ROE, M.J., HARRISON, I., KAPPERS, M., HUMPHREYS, C.J. and BROWN, P.D., 2006. Effects of KOH etching on the properties of Ga-polar n-GaN surfaces Philos. Mag.. 86(16), 2315-2327 SUNDARAMOORTHY, V.K., FOXON, C.T., NOVIKOV, S.V., EDMONDS, K.W. and HARRISON, I., 2006. Conductivity of Cubic GaMnN Grown on Undoped GaN Layers In: Proceedings of the IEEE International Conference on Semiconductor Electronics. 915 - 918
MARTINEZ, C.E., STANTON, N.M., KENT, A.J.: WILLIAMS, M.L., HARRISON, I., TANG, H., WEBB, J.B. and BARDWELL, J.A., 2006. Energy Relaxation by Hot 2D Electrons in AlGaN/GaN Heterostructures: The Influence of Strong Impurity and Defect Scattering Semiconductor Science and Technology. 21(12), 1580 - 1583 BULL, S., TOMM, J.W., OUDART, M., NAGLE, J., SCHOLZ, C., BOUCKE, K., HARRISON, I. and LARKINS, E.C., 2005. By-emitter degradation analysis of high-power laser bars Journal of Applied Physics. 98, 063101 BREAM, P.J, BULL, S., HARRISON, I., SUJECKI, S. and LARKINS, E.C., 2005. Fourier transform analysis method for modeling the positions and properties of cavity defects in Fabry–Pérot laser diodes Applied Physics Letters. 86, 061104 ANDRIANOV, A. V., NOVIKOV, S. V., ZHURAVLEV, I. S., LI, T., XIA, R., BULL, S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2005. Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic Semiconductors. VOL 39(NUMB 1), 73-76 BULL, S., ANDRIANOV, A.V., HARRISON, I., DORIN, M., KERR, R.B., NOTO, J. and LARKINS, E.C., 2005. A spectroscopically resolved photo- and electroluminescence microscopy technique for the study of high-power and high-brightness laser diodes IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT. 54(3), 1079 - 1088 MARTINEZ, C. E., STANTON, N. M., KENT, A. J., WILLIAMS, M. L., HARRISON, I., TANG, H., WEBB, J. B. and BARDWELL, J. A., 2004. Hot electron energy relaxation in AlGaN/GaN heterostructures Semiconductor Science and Technology. VOL 19(NO 4), S440-S442 HARRISON, I., DAHLSTRÖM, M., KRISHNAN, S., GRIFFITH, Z., KIM, Y.M. and RODWELL, M.J.W., 2004. Thermal limitations of InP HBTs in 80-and 160-Gb ICs IEEE Transactions on Electron Devices. 51(4), 529-534 FAY,M.W., HARRISON,I., LARKINS,E.C., NOVIKOV,S.V., FOXON,C.T. and BROWN,P.D., 2004. Electron Microscopy And Analysis 2003 Electron Microscopy and Analysis 2001: Electron Microscopy and analysis. 179, 23-26
BULL, S., ANDRIANOV, A.V., HARRISON, I. and LARKINS, E.C., 2004. The study of strain and defects in high power laser diodes by spectroscopically resolved photoluminescence microscopy European Physical Journal - Applied Physics. 27(1 - 3), 469 - 473 FAY, M.W., MOLDOVAN, G., WESTON, N.J., BROWN, P.D, HARRISON, I., HILTON, K.P., MASTERTON, A., WALLIS, D., BALMER, R.S., UREN, M.J. and MARTIN, T., 2004. Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN/GaN with varying Ti contact Journal of Applied Physics. 96(10), 5588-5595 MOLDOVAN, G., HARRISON, I., ROE, M. and BROWN, P.D., 2004. Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN In: Institute of Physics Conference Series. 115-118
MOLDOVAN, G., HARRISON, I., HUMPHREYS, C.J. and BROWN, P.D., 2004. Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts Materials Science and Technology. 20, 533-538 MOLDOVAN, G., HARRISON, I. and BROWN, P.D., 2004. EBIC study of Au/n-type GaN Schottky contacts In: Institute of Physics Conference Series. 115-118
MOLDOVAN, G., HARRISON, I. and BROWN, P.D., 2004. Noise deconvolution for area fraction measurements Materials Science and Technology. 20, 16-24 FAY,M.W., MOLDOVAN,G., HARRISON,I., LARKINS,E.C., FOXON,C.T., BALMER,R.S., SOLEY,D.E., HILTON,K.P., HUGHES,B.T., UREN,M.J., MARTIN,T. and BROWN,P.D., 2003. Characterisation of nitrides by energy filtered TEM and EELS Physica Status Solidi (C) - Conferences and Critical Reviews. 0(7), 2452-2455 NOVIKOV, S. V., WINSER, A. J., LI, T., CAMPION, R., HARRISON, I. and FOXON, C. T., 2003. Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic Journal of Crystal Growth. VOL 247(NUMBER 1-2), 35-41 ANDRIANOV, A. V., NOVIKOV, S. V., LI, T., XIA, R., BULL, S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2003. Photoluminescence from self-assembled GaAs inclusions embedded in a GaN host crystal Physica Status Solidi B: Basic Research. VOL 238(PART 1), 204-212 BULL, S., ANDRIANOV, A.V., HARRISON, I. and LARKINS, E.C., 2003. Development of a spectroscopically resolved photoluminescence microscopy technique for studying strain and defects in high power laser diodes In: Europhysics Conference Abstracts - CLEO Europe 2003. CC4-04-MON-
FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J., HARRISON, I., KAPPERS, M. J. and HUMPHREYS, C. J., 2003. Arsenic incorporation in GaN during growth by molecular beam epitaxy Journal of Crystal Growth. VOL 251(NUMBER 1-4), 510-514 ANDRIANOV, A.V., NOVIKOV, S.V., LI, T., XIA, R., BULL, S., ZHURAVLEV, I.S., HARRISON, I., LARKINS, E.C. and FOXON, C.T., 2003. Luminescence from GaAs nanocrystals self-organised in GaN:As matrix grown by MBE In: Abstracts of VI Russian Conference on Physics of Semiconductors. 159-
BREAM,P.J., BULL,S., XIA,R., ANDRIANOV,A.V., HARRISON,I. and LARKINS,E.C., 2003. The influence of defects on the emission spectra of high power laser diodes In: Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003. 177
XIA, R., ANDRIANOV, A.V., BULL, S., HARRISON, I., LANDESMAN, J.P. and LARKINS, E.C., 2003. Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes Optical and Quantum Electronics. 35(12), 1099 - 1106 NOVIKOV, S. V., ZHAO, L. X., HARRISON, I. and FOXON, C. T., 2003. Isoelectronic doping of AlGaN alloys Physica Status Solidi B: Basic Research. VOL 240(PART 2), 408-411 ANDRIANOV, A. V., NOVIKOV, S. V., LI, T., ZHURAVLEV, I. S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2003. Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy Semiconductor Science and Technology. VOL 18(PART 11), 997-1000 FOXON, C. T., NOVIKOV, S. V., ZHAO, L. X. and HARRISON, I., 2003. Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets Applied Physics Letters. VOL 83(PART 6), 1166-1168 NOVIKOV, S. V., ZHAO, L. X., WINSER, A. J., KAPPERS, M. J., BARNARD, J. S., HARRISON, I., HUMPHREYS, C. J. and FOXON, C. T., 2003. Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates Journal of Crystal Growth. VOL 256(NUMBER 3-4), 237-242 ZHAO, L.X. and HARRISON, I., 2003. Isoelectronic doping of AlGaN alloys Physica Status Solidi B: Basic Research. 240, 408- HARRISON,I., DAHLSTROM,M., KRISHNAN,S., GRIFFITH,Z., KIM,Y.M. and RODWELL,M.J., 2003. Thermal limitations of InP HBT's in 80 and 160 Gbits<sup>-1</sup> IC's In: International Conference on Indium Phosphide and Related Materials. 160-163 FAY,M.W., MOLDOVAN,G., HARRISON,I., BALMER,R.S., SOLEY,D.E., HILTON,K.P., HUGHES,B.T., UREN,M.J., MARTIN,T. and BROWN,P.D., 2003. TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN In: Institute of Physics Conference Series. 483-486
CAVILL, S. A., AKIMOV, A. V., STANTON, N. M., KENT, A. J., NOVIKOV, S. V., HARRISON, I. and FOXON, C. T., 2002. Nonradiative processes and phonon emission in GaAsN alloys Physica B - Physics of Condensed Matter. VOL 316-317, 114-117 FAY, M.W., MOLDOVAN, G., BROWN, P.D., HARRISON, I., BIRBECK, J.C., HUGHES, B.T., UREN, M.J. and MARTIN, T., 2002. Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts Journal of Applied Physics. 92(1), 94-100 XIA, R., LARKINS, E.C., HARRISON, I., DODS, S.R.A., ANDRIANOV, A., MORGAN, J. and LANDESMAN, J.P., 2002. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars IEEE Photonics Technology Letters. 14(7), 893-895 FOXON, C. T., HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., WINSER, A. J., KOVARSKY, A. P. and BER, B. J., 2002. The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules Journal of Crystal Growth. VOL 234(NUMBER 2-3), 343-348 NOVIKOV, S. V., WINSER, A. J., BELL, A., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., PONCE, F. A. and FOXON, C. T., 2002. The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy Journal of Crystal Growth. VOL 240(NUMBER 3-4), 423-430 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J. and HARRISON, I., 2002. Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy Physica Status Solidi A: Applied Research. VOL 192(NO 1), 39-43 LI, T., STADDON, C. R., NOVIKOV, S. V., FEWSTER, P. F., WIDDOWSON, A., ANDREW, N. L., KIDD, P., HARRISON, I., WINSER, A. and LIAO, Y., 2002. X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. VOL 235(NUMBER 1-4), 103-110 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J. and HARRISON, I., 2002. Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy Physica Status Solidi A: Applied Research. VOL 192(NO 2), 441-445 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., DAVIS, C. S., WINSER, A. J., HARRISON, I. and LIAO, Y., 2002. Strong blue emission from GaN isoelectronically doped with arsenic Materials Science and Engineering B: Solid-State Materials for Advanced Technology. VOL 93(NO 1-3), 35-38 ANDRIANOV,A.V., XIA,R., BULL,S., WINSER,A.J., STADDON,C.R., HARRISON,I. and LARKINS,E.C., 2002. Near-infrared emission from MBE grown As-doped GaN In: Proceedings of the 26th International Conference on the Physics of Semiconductors.
FOXON, C. T., HARRISON, I., NOVIKOV, S. V., WINSER, A. J., CAMPION, R. P. and LI, T., 2002. The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy Journal of Physics: Condensed Matter. VOL 14(PART 13), 3383-3398 DAVIS,C.S., ANDRIANOV,A.V., WINSER,A.J., XIA,R., STADDON,C.R., HARRISON,I. and LARKINS,E.C., 2002. MBE growth and characterisation of N-dilute GaAsN films on misoriented GaAs substrates In: Conference on Semiconductor and Integrated Optoelectronics (SIOE).
FAY,M.W., HARRISON,I., BALMER,R.S., HUGHES,B.T., UREN,M.J., MARTIN,T. and BROWN,P.D., 2002. TEM assessment of AuTiAlTi and AuPdAlTi ohmic contacts to AlGaN/GaN Physica Status Solidi (C) - Conferences and Critical Reviews. 219-222 XIA, R., LARKINS, E.C., HARRISON, I., ANDRIANOV, A.V., MORGAN, J.M. and LANDSMAN, J.P., 2002. The effect of mounting induced strain and defects on the properties of AlGaAs 808 nm laser diodes synthetic Metals. 127, 255- FAY, M. W., MOLDOVAN, G., HARRISON, I., BIRBECK, J. C., HUGHES, B. T., UREN, M. J., MARTIN, T. and BROWN, P. D., 2002. TEM Assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu Ohmic Contacts Materials Research Society Symposium Proceedings: GaN and related alloys. VOL 693, 755-760 XIA, R., HARRISON, I., LARKINS, E.C., ANDRIANOV, A.V., MORGAN, J.M., PARBROOK, P.J., BUTTON, C.C. and HILL, G., 2002. Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B93, 234-
SWEENEY, F., HASTIE, J., MANSON-SMITH, S.K., COWAN, D.A., MCCOLL, D., MOHAMMED, A., O''DONNELL, K.P., ZUBIA, D., HERSEE, S.D. and HARRISON, I., 2002. Characterization of nitride thin films by electron backscatter diffraction Journal of Microscopy. 205, 226-230 LI, T., WINSER, A.J. and HARRISON, I., 2002. Optimisation of the blue emission from As-doped GaN films grown by molecular beam epitaxy Physica Status Solidi A: Applied Research. 192, 39- LI, T., DAVIS, C.S., WINSER, A.J., HARRISON, I. and LIAO, Y., 2002. Strong blue emission from GaN isoelectronically doped with arsenic Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B93, 35-
MAVROIDIS, C., HARRIS, J.J., JACKMAN, R.B., HARRISON, I., ANSELL, B.J., BOUGRIOUA, Z. and MOERMAN, I., 2002. Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers Journal of Applied Physics. 91, 9835-9840 LI, T., WINSER, A.J. and HARRISON, I., 2002. Bismuth a new surfactant or contact for GaN films grown by molecular beam eptiaxy Physica Status Solidi A: Applied Research. 192, 441- NOVIKOV, S.V., WINSER, A.J., HARRISON, I., DAVIS, C.S. and FOXON, C.T., 2001. A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride Semiconductor Science and Technology. 16(2), 103-106 HARRISON, I., CLAYTON, N.W. and JEFFS, N.J., 2001. High temperature RF characterisation of SiN passivated and unpassivated AlGaN/GaN HFETs Physica Status Solidi. A, Applied Research. 188(1), 275-278 FOXON, C. T., NOVIKOV, S. V., CAMPION, R. P., DAVIS, C. S., CHENG, T. S., WINSER, A. J. and HARRISON, I., 2001. Growth of GaNAs films by molecular beam epitaxy Journal of Crystal Growth. VOLS 227-228, 486-490 HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., LIAO, Y., WINSER, A. J. and FOXON, C. T., 2001. On the Origin of Blue Emission from As-Doped GaN Physica Status Solidi B: Basic Research. VOL 228(PART 1), 213-217 NOVIKOV, S. V., LI, T., WINSER, A. J., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I. and FOXON, C. T., 2001. Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System Physica Status Solidi B: Basic Research. VOL 228(NO 1), 223-225 WINSER, A. J., HARRISON, I., NOVIKOV, S. V., DAVIS, C. S., CAMPION, R., CHENG, T. S. and FOXON, C. T., 2001. Blue emission from arsenic doped gallium nitride Journal of Crystal Growth. VOL 230(NUMBER 3-4), 527-532 FOXON, C. T., NOVIKOV, S. V., LIAO, Y., WINSER, A. J., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R. and DAVIS, C. S., 2001. The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy Physica Status Solidi B: Basic Research. VOL 228(NO 1), 203-206 NOVIKOV, S. V., LI, T., WINSER, A. J., FOXON, C. T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I., KOVARSKY, A. P. and BER, B. J., 2001. The Influence of Arsenic Incorporation on the Optical Properties of As-Doped GaN Films Grown by Molecular Beam Epitaxy Using Arsen Physica Status Solidi B: Basic Research. VOL 228(NO 1), 227-229 FOXON, C. T., NOVIKOV, S. V., CAMPION, R. P., LIAO, Y., WINSER, A. J. and HARRISON, I., 2001. The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy Physica Status Solidi B: Basic Research. VOL 228(NO 1), 219-222 GIL, B., MOREL, A., TALIERCIO, T., LEFEBVRE, P., FOXON, C. T., HARRISON, I., WINSER, A. J. and NOVIKOV, S. V., 2001. Carrier relaxation dynamics for As defects in GaN Applied Physics Letters. VOL 79(PART 1), 69-71 BELL, A., PONCE, F. A., NOVIKOV, S. V., FOXON, C. T. and HARRISON, I., 2001. Spatially Resolved Cathololuminescence Study of As Doped GaN Physica Status Solidi B: Basic Research. VOL 228(PART 1/2), 207-211 BELL, A., PONCE, F. A., NOVIKOV, S. V., FOXON, C. T. and HARRISON, I., 2001. The nature of arsenic incorporation in GaN Applied Physics Letters. VOL 79(PART 20), 3239-3241 SWEENEY, E., TRAGER-COWAN, C., HASTIE, J., COWAN, D. A., O DONNELL, K. P., ZUBIA, D., HERSEE, S. D., FOXON, C. T., HARRISON, I. and NOVIKOV, S. V., 2001. Electron Backscattered Diffraction Patterns from Cooled Gallium Nitride Thin Films Physica Status Solidi B: Basic Research. VOL 228(NO 2), 533-536 XIA, R., HARRISON, I., BEAUMENT, B., ANDRIANOV, A.V., MORGAN, J.M. and LARKINS, E.C., 2001. Spectrally resolved electroluminescence microscopy and µ-elecroluminescence investigation of GaN-based LEDS Journal of Crystal Growth. 230, 467- CAMPION, R. P., LI, T., FOXON, C. T. and HARRISON, I., 2001. The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy Physica Status Solidi A: Applied Research. VOL 188(PART 2), 663-666 ANSELL, B. J., HARRISON, I. and FOXON, C. T., 2001. The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs Physica Status Solidi A: Applied Research. VOL 188(PART 1), 279-282 XU, H. Z., BELL, A., WANG, Z. G., OKADA, Y., KAWABE, M., HARRISON, I. and FOXON, C. T., 2001. Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate Journal of Crystal Growth. VOL 222(NUMBER 1-2), 96-103 XU, H. Z., TAKAHASHI, K., WANG, C. X., WANG, Z. G., OKADA, Y., KAWABE, M., HARRISON, I. and FOXON, C. T., 2001. Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE Journal of Crystal Growth. VOL 222(NUMBER 1-2), 110-117 BELL, A., HARRISON, I., KORAKAKIS, D., LARKINS, E.C., HAYES, J.M. and KUBALL, M., 2001. Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN Journal of Applied Physics. 89, 1070- MAVROIDIS, C., HARRIS, J.J., HARRISON, I., ANSELL, B.J., BOUGRIOUA, Z. and MOERMAN, I., 2001. Simultaneous impurity-band and interface conduction in depthprofiled n-GaN epilayers Physica Status Solidi B: Basic Research. 228, 579-583 LI, T., WINSER, A.J., STADDON, C.R., DAVIS, C.S. and HARRISON, I., 2001. Temperature dependence of the miscibility gap on the GaN-rich side of the Ga-N-As system Physica Status Solidi B: Basic Research. 228, 223- LIAO, Y., WINSER, A.J., HARRISON, I., LI, T., STADDON, C.R. and DAVIS, C.S., 2001. The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy Physica Status Solidi B: Basic Research. 228, 203- FAY,M.W., HARRISON,I., BIRBECK,J.C., HUGHES,B.T., UREN,M.J., MARTIN,T. and BROWN,P.D., 2001. Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts on AlGaN/GaN In: Institute of Physics Conference Series. 497-500
MOLDOVAN, G., MARLAFEKA, S., HARRISON, I. and BROWN, P.D., 2001. Surface preparation procedures for contacting GaN In: Institute of Physics Conference Series. 357-360
MARLAFEKA, S., BOCK, N., CHENG, T.S., WINSER, A.J., HARRISON, I. and BROWN, P.D., 2001. A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy Journal of Crystal Growth. 230, 415-420 LI, T., WINSER, A.J., STADDON, C.R., DAVIS, C.S., HARRISON, I. and KOVARSKY, A.P., 2001. The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers Physica Status Solidi B: Basic Research. 228, 227- FAY, M.W., HARRISON, I., BIRBECK, J.C., HUGHES, B.T., UREN, M.J., MARTIN, T. and BROWN, P.D., 2001. TEM assessment of GaN/AlGaN/TiAlTiAu ohmic contacts In: Institute of Physics Conference Series. 345-348
LI, T. and HARRISON, I., 2001. The growth of GaN using plasma assisted metalorganic vapour phase epitaxy Physica Status Solidi A: Applied Research. 188, 663- ANDRIANOV, A.V., ORTON, J.W., BENSON, T.M., HARRISON, I., LARKINS, E.C., DAIMINGER, F.X., VASSILAKIS, E. and HIRTZ, J.P., 2000. Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes Journal of Applied Physics. 87, 3227- BELL, A., HARRISON, I., CHENG, T. S., KORAKAKIS, D., FOXON, C. T., NOVIKOV, S., BER, B. Y. and KUDRIAVTSEV, Y. A., 2000. An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy Semiconductor Science and Technology. VOL 15(PART 8), 789-793 WINSER, A. J., NOVIKOV, S. V., DAVIS, C. S., CHENG, T. S., FOXON, C. T. and HARRISON, I., 2000. Strong blue emission from As doped GaN grown by molecular beam epitaxy Applied Physics Letters. VOL 77(PART 16), 2506-2508 XU, H. Z., WANG, Z. G., KAWABE, M., HARRISON, I., ANSELL, B. J. and FOXON, C. T., 2000. Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE Journal of Crystal Growth. VOL 218(NUMBER 1), 1-6 BELL, A., HARRISON, I., KORAKAKIS, D., LARKINS, E.C., HAYES, J.M. and KUBALL, M., 2000. A study of annealed Gan grown by molecular beam epitaxy using photoluminescence spectroscopy MRS Internet Journal of Nitride Semiconductor Research. 5, 51-
HARRIS, J. J., LEE, K. J., WEBB, J. B., TANG, H., HARRISON, I., FLANNERY, L. B., CHENG, T. S. and FOXON, C. T., 2000. The implications of spontaneous polarization effects for carrier transport measurements in GaN Semiconductor Science and Technology. VOL 15(PART 4), 413-417 XU, H. Z., WANG, Z. G., HARRISON, I., BELL, A., ANSELL, B. J., WINSER, A. J., CHENG, T. S., FOXON, C. T. and KAWABE, M., 2000. Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy Journal of Crystal Growth. VOL 217(NUMBER 3), 228-232 ANSELL, B.J., HARRISON, I., HARRIS, J.J. and CHENG, T.S., 2000. Direct evidence for defect conduction at interface between gallium nitride and sapphire Electronics Letters. 36, 1237- HARRISON,I., 2000. Diffusion of impurities. In: PEARSALL, T., ed., Properties, Processing and Applications of Indium Phosphide Institution of Engineering and Technology ,. 251-
CHENG, T.S., DAVIS, C.S., WINSER, A.J. and HARRISON, I., 2000. Arsenic-doped Gan grown by molecular beam epitaxy Journal of Crystal Growth. 219, 327- BLANT, A.V., NOVIKOV, S.V., CHENG, T.S., FLANNERY, L.B., HARRISON, I., CAMPION, R.P., KORAKAKIS, D., LARKINS, E.C., KRIBES, Y. and FOXON, C.T., 1999. Ga-metal inclusions in GaN grown on sapphire Journal of Crystal Growth. VOL 203(NUMBER 3), 349-354 KUBALL, M., MORRISSEY, F. H., BENYOUCEF, M., HARRISON, I., KORAKAKIS, D. and FOXON, C. T., 1999. Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching Physica Status Solidi A: Applied Research. VOL 176(NUMBER 1), 355-358 HARRIS, J. J., LEE, K. J., HARRISON, I., FLANNERY, L. B., KORAKAKIS, D., CHENG, T. S., FOXON, C. T., BOUGRIOUA, Z., MOERMAN, I. and VAN DER STRICHT, W., 1999. Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD Physica Status Solidi A: Applied Research. VOL 176(NUMBER 1), 363-368 BLANT, A.V., CHENG, T.S., JEFFS, N.J., FLANNERY, L.B., HARRISON, I., MOSSELMANS, J.F.W., SMITH, A.D. and FOXON, C.T., 1999. EXAFS studies of Mg doped InN grown on Al"2O"3 Materials Science and Engineering B: Solid-State Materials for Advanced Technology. VOL 59(NUMBER 1-3), 218 - 221 HAYES, J. M., KUBALL, M., BELL, A., HARRISON, I., KORAKAKIS, D. and FOXON, C. T., 1999. High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN Applied Physics Letters. VOL 75(NUMBER 14), 2097-2099 KUBALL, M., HAYES, J.M., BELL, A., HARRISON, I. and KORAKAKIS, D., 1999. The influence of the annealing ambient on strain and doping in GaN during high-temperature processing Physica Status Solidi A: Applied Research. 176, 759- BLANT, A.V., CHENG, T.S., JEFFS, N.J., FLANNERY, L.B., HARRISON, I. and SMITH, A.D., 1999. EXAFS studies of Mg doped InN grown on A1<sub>2</sub>O<sub>3</sub> Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B59, 218-
KECHE, M., WOOLFSON, M.S., HARRISON, I. and OUAMRI, A., 1998. Improved multiple targets angle tracking algorithm using the joint probabilistic data association filter IEE Proceedings - Radar, Sonar and Navigation. 145, 331- LARKINS,E.C., DODS,S.R.A., ANDRIANOV,A.V., MORGAN,J.HARRISON,I., BENSON,T.M. and ORTON,J.W., 1998. A highly integrated system for a fast, flexible and comprehensive characterisation of semiconductor lasers In: Lasers and Electro-Optics Europe, 1998. 1998 CLEO/Europe. 98
KATSAVETS, N. I., LAWS, G. M., HARRISON, I., LARKINS, E. C., BENSON, T. M., CHENG, T. S. and FOXON, C. T., 1998. Study of GaN thin layers subjected to high-temperature rapid thermal annealing Semiconductors. VOL 32(NUMBER 10), 1048-1053 LAWS,G.M., REN,G.B., HARRISON,I., LARKINS,E.C., ORTON,J.W., HOOPER,S.E. and CHENG,T.S., 1998. Electrical and optical characterisation of homojunction gallium nitride light emitting diodes In: Nitride Semiconductors. 1113-
HO, H.P., HARRISON, I. and TUCK, B., 1998. Impurity induced disordering in AlAs-GaAs multiquantum well structures by Zn Diffusion In: IOP Solid State Conference 1998, Nottingham, UK.
KRIBES, Y., HARRISON, I., TUCK, B. and CHENG, T.S., 1998. Electrical properties of n-GaN/n<sup>+</sup>-GaAs interfaces Journal of Crystal Growth. 190, 773- FLANNERY, L.B., HARRISON, I., LACKLISON, D.E., DYKEMAN, R.I. and CHENG, T.S., 1998. Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B50, 307-
DEWSNIP, D.J., ANDRIANOV, A.V., HARRISON, I., ORTON, J.W., LACKLISON, D.E., REN, G.B., HOOPER, S.E. and CHENG, T.S., 1998. Photoluminescence of MBE grown wurtzite Be-doped GaN Semiconductor Science and Technology. 13, 500- DEWSNIP, D.J., ORTON, J.W., LACKLISON, D.E., FLANNERY, L.B., ANDRIANOV, A.V., HARRISON, I., HOOPER, S.E., CHENG, T.S., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. MBE growth and characterization of magnesium-doped gallium nitride Semiconductor Science and Technology. 13, 927- BABA-ALI, N., HARRISON, I. and TUCK, B., 1998. Does sulphur induce disordering in GaAs-AlAs superlattices? In: IOP Solid State Conference 1998, Nottingham, UK.
BELKOV, V.V., BOTNARYUK, V.M., FEDOROV, L.M., GONCHARUK, I.N., ULIN, V.P., ZHILYAEV, Y.V., CHENG, T.S., JEFFS, N.J., KATSAVETS, N.I. and HARRISON, I., 1998. Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates Journal of Crystal Growth. 187, 29- CHENG, T.S., JEFFS, N.J., DEWSNIP, D.J., FLANNERY, L.B., ORTON, J.W., HARRISON, I., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. Magnesium-doped GaN films grown by molecular beam epitaxy on GaAs(111)B substrates Materials Science Forum. 264, 1217-
CALLEJA, E., SANCHEZ-GARCIA, M.A., BASAK, D., SANCHEZ, F.J., CALLE, F., YOUINOU, P., MUNOZ, E., SERRANO, J.J., BLANCO, J.M., VILLAR, C., LAINE, T., OILA, J., SAARINEN, K., HAUTOJARVI, P., MOLLOY, C.H., SOMERFORD, D.J. and HARRISON, I., 1998. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular beam epitaxy Physical Review B. 58, 1550- CHENG, T.S., JEFFS, N.J., DEWSNIP, D.J., FLANNERY, L.B., ORTON, J.W., HARRISON, I., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. Studies of p-GaN grown by MBE on GaAs(111)B Journal of Crystal Growth. 190, 516- CHENG,T.S., JEFFS,N.J., DEWSNIP,D.J., FLANNERY,L.B., ORTON,J.W., HARRISON,I., BER,B.Y. and KUDRIAVTSEV,Y.A., 1998. Magnesium-doped GaN films grown by molecular beam epitaxy on GaAs(111)B substrates In: Silicon Carbide, III-Nitrides and Related Materials Conference 1998. 1217-1220
HEASMAN, K.C., HARRISON, I., HOMEWOOD, K.P. and SEALY, B.J., 1998. Impurity induced disordering of Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs MQW structures In: IOP Solid State Conference 1998, Nottingham, UK.
AHMEDA, S. S., KECHE, M., HARRISON, I. and WOOLFSON, M. S., 1997. Adaptive joint probabilistic data association algorithm for tracking multiple targets in cluttered environment IEE Proceedings - Radar, Sonar and Navigation. VOL 144(NUMBER 6), 309-314 KECHE, M., OUAMRI, A., HARRISON, I. and WOOLFSON, M. S., 1997. Performance evaluation of an algorithm for multiple target angle tracking IEE Proceedings - Radar, Sonar and Navigation. VOL 144(NUMBER 5), 252-258 KECHE, M., WOOLFSON, M.S., HARRISON, I., OUAMRI, A. and AHMEDA, S.S., 1997. Improved adaptive joint probabilistic data association filter for multiple targets angles tracking Electronics Letters. 33, 1361- HARRISON, I., ANDRIANOV, A.V., ORTON, J.W., LARKINS, E.C., NAGLE, J., ASONEN, H., NAPPI, J. and ESQUIVIAS, I., 1997. Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes In: European Semiconductor Laser Workshop.
DEWSNIP, D. J., ANDRIANOV, A. V., HARRISON, I., LACKLISON, D. E., ORTON, J. W., MORGAN, J., REN, G. B., CHENG, T. S., HOOPER, S. E. and FOXON, C. T., 1997. Observation of resonant Raman lines during the photoluminescence of doped GaN Semiconductor Science and Technology. VOL 12(NUMBER 1), 55-58 ANDRIANOV, A.V., ORTON, J.W., HARRISON, I., LARKINS, E.C., DAIMINGER, F.X., VASSILAKIS, E. and HIRTZ, J.P., 1997. Photoluminescence microscopy of mirror facets of board area laser diodes In: IEEE LEOS 1997 Annual Meeting Proceedings. 68-
KRIBES, Y., HARRISON, I., TUCK, B. and CHENG, T.S., 1997. Investigation of Au schottky contacts on GaN grown by molecular beam epitaxy Semiconductor Science and Technology. 12, 913- NOVIKOV, S. V., CHENG, T. S., MAHMOOD, Z., HARRISON, I. and FOXON, C. T., 1997. Selective meltback etching of GaN layers in liquid-phase electroepitaxial technique Journal of Crystal Growth. VOL 173(NUMBER 1/2), 1-4 KRIBES, Y., HARRISON, I., TUCK, B., KIM, K. S., CHENG, T. S. and FOXON, C. T., 1997. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy Semiconductor Science and Technology. VOL 12(NUMBER 11), 1500-1505 KRIBES,Y., HARRISON,I., TUCK,B. and CHENG,T.S., 1997. Electrical characterisation of GaN/GaAs interfaces In: 2nd International Conference on III-V Nitrides.
LAWS, G.M., REN, G.B., HARRISON, I., LARKINS, E.C., ORTON, J.W. and HOOPER, S.E., 1997. Electrical and optical characterisation of homojunction gallium nitride emitting diodes Materials Research Society Symposium Proceedings.
FLANNERY, L.B., HARRISON, I., LACKLISON, D.E., DYKEMAN, R.I. and CHENG, T.S., 1997. Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B50, 307-
TUCK,B. and HARRISON,I., 1997. Electrical characterisation of GaN/GaAs surfaces In: 2nd International Conference on III-V Nitrides.
AHMEDA,S.S., HARRISON,I. and WOOLFSON,M.S., 1997. Tracking multiple targets with a phased array radar In: Proceedings of RADAR 97 Conference. 601-605
KECHE, M., HARRISON, I., WOOLFSON, M.S. and OUAMRI, A., 1997. Adaptive update time target tracking using recursive input estimation In: Proceedings of RADAR 97 Conference. 620-
CHENG, T.S. and HARRISON, I., 1997. Selective meltback etching of GaN layers in liquid-phase electroepitaxial technique Journal of Crystal Growth. 172, 1-
AHMEDA, S.S., HARRISON, I. and WOOLFSON, M.S., 1996. Adaptive probabilistic data-association algorithm for tracking in cluttered environment IEE Proceedings - Radar, Sonar and Navigation. 143, 17- KECHE,M., OUAMRI,A., HARRISON,I., WOOLFSON,M.S. and OULDMAMMER,M., 1996. An efficient algorithm for the data association problem solving in multiple targets angle tracking In: Proceedings of the IAESTED International Conference on Signal and Image Processing and Applications. 114-
HARRISON,I., 1996. Diffusion of impurities. In: BROZEL, M.R. and STILLMAN, G.E., eds., Properties of Gallium Arsenide 3rd. Institution of Engineering and Technology. 429-
MUNU, M., HARRISON, I. and WOOLFSON, M.S., 1995. Comparison of the Kalman, &alpha&beta and &alpha&beta&gamma filters for the tracking of targets using radar with variable update time Applied Signal Processing. 2, 24-
BABA-ALI, N., HARRISON, I. and TUCK, B., 1995. Arsenic pressure-dependence of group-III atom interdiffusion in GaAs-AlAs single-well heterostructures Journal of Materials Science: Materials in Electronics. 6, 127- PAVESI, L., HENINI, M., JOHNSTON, D. and HARRISON, I., 1995. A comparison of Si-doped (100), (111)a, (111)b and (311)b Al<sub>x</sub>Ga<sub>1-x</sub>As samples grown by molecular-beam epitaxy Semiconductor Science and Technology. 10, 49- LACKLISON, D.E., ORTON, J.W., HARRISON, I., CHENG, T.S., JENKINS, L.C. and HOOPER, S.E., 1995. Band-gap of GaN films grown by molecular-beam epitaxy on GaAs and gap substrates Journal of Applied Physics. 78, 1838- HARRISON,R.D., HARRISON,I. and HOWE,A.F., 1995. Thin film fuse link In: Proceedings of the 5th ICEFA conference, Ilmenau, Germany, Published by VDE-Verlag Berlin, Ed. G. Nutsch. 169-
KURSCHNER, H., EHRHARDT G NUTSCH, A., HARRISON, I., BOERNER, A. and MICKLEY, T., 1995. Calculating pre-arcing times using finite-element method In: Proceedings of the 5th ICEFA conference, Ilmenau, Germany, Published by VDE-Verlag Berlin, Ed. G. Nutsch. 156-
HARRISON, I., PAVESI, L., HENINI, M. and JOHNSTON, D., 1994. Annealing effects on Si-doped GaAs grown on high-index planes by molecular-beam epitaxy Journal of Applied Physics. 75, 3151- BABA-ALI, N., HARRISON, I., HO, H.P., TUCK, B. and HENINI, M., 1993. Annealing-induced dislocation loops in Si-doped GaAs/AlAs superlattices Journal of Materials Science: Materials in Electronics. 4, 29- VETESSE,C., HARRISON,I., BENSON,T.M., ROBERTSON,M. and MURRELL,D., 1993. An investigation into the effects of thermal annealing on long wavelength InGaAs/InGaAsP multiquantum well lasers In: Fifth International Conference on Indium Phosphide and Related Compounds. 40-
MUNU,M., HARRISON,I. and WOOLFSON,M.S., 1993. Tracking performances measures and optimisation conditions for phased array radar In: International Conference on Signal Processing Applications andTechnology.
HARRISON, I., 1993. Impurity-induced disordering in III-V multiquantum wells and superlattices Journal of Materials Science: Materials in Electronics. 4, 1- PAVESI, L., HARRISON, I. and HENINI, M., 1993. Si doping of GaAs grown by molecular beam epitaxy on different substrate orientations Materials Science Forum. 117-118, 387-
PAVESI, L., HENINI, M. and HARRISON, I., 1993. Orientation dependence of the Si doping of GaAs grown by molecular-beam epitaxy Semiconductor Science and Technology. 8, 167- PAVESI,L., PIAZZA,F., HARRISON,I. and HENINI,M., 1993. Si doping of GaAs grown by molecular beam epitaxy on different substrate orientations In: Proceedings of the 5th International Conference on Shallow Impurities in Semiconductors. 387-392
MUNU, M., HARRISON, I. and WOOLFSON, M.S., 1992. Comparison of adaptive target-tracking algorithms for phased array radar IEE Proceedings-F Radar Signal Processing. 139, 336- MUNU, M., HARRISON, I. and WOOLFSON, M.S., 1992. Comparison of Kalman and &alpha&beta filters for the tracking of targets using phased array radar In: IEE Radar ''92 Conference, Brighton, UK, IEE conference publication 365. 196-
PAVESI, L., KY, N.H., GANIERE, J.D., REINHART, F.K., BABA-ALI, N., HARRISON, I., TUCK, B. and HENINI, M., 1992. Role of point-defects in the silicon diffusion in GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As and in the related superlattice disordering Journal of Applied Physics. 71, 2225- BABA-ALI, N., HARRISON, I., TUCK, B., HO, H.P. and HENINI, M., 1991. Sulfur diffusion in GaAs-AlAs superlattices Optical and Quantum Electronics. 23, S813- HO, H.P., HARRISON, I., BABA-ALI, N., TUCK, B. and HENINI, M., 1991. The effect of arsenic pressure on the diffusion-induced disordering of tin in AlAs/GaAs superlattices Journal of Materials Science: Materials in Electronics. 2, 137- HO, H.P., HARRISON, I., BABA-ALI, N. and TUCK, B., 1991. Diffusion-induced defects in GaAs by zinc and the effects of post-diffusion anneal Journal of Applied Physics. 69, 3494- WILKIN, D.J., HARRISON, I. and WOOLFSON, M.S., 1991. Target tracking algorithms for phased-array radar IEE Proceedings-F Radar Signal Processing. 138, 255- HARRISON,I., 1991. Diffusion of impurities. In: Properties of Indium Phosphide Institution of Engineering and Technology. 263-
HARRISON,R.D., HOWE,A.F. and HARRISON,I., 1991. Ageing of film fuses on substrates In: Proceeding of the 4th International Conference on Electric Fuses and their Applications, University of Nottingham, UK. 85-
HARRISON, I., HO, H.P. and BABA-ALI, N., 1991. Diffusion induced disorder of GaAs/AlGaAs superlattices Journal of Electronic Materials. 20, 449-
BABA-ALI, N., HARRISON, I., TUCK, B., HO, H.P., HENINI, M. and HUGHES, O.H., 1990. Annealing of GaAs/AlAs superlattices Journal of Materials Science: Materials in Electronics. 1, 133- HARRISON, I. and TUCK, B., 1990. Diffusion of impurities Properties of Gallium Arsenide INSPEC IEE. 341-
HARRISON, I., HO, H.P., TUCK, B., HENINI, M. and HUGHES, O.H., 1990. The effect of as on zn diffusion-induced disordering of AlAs/GaAs superlattices Semiconductor Science and Technology. 5, 561- HIBBERT,S., BABA-ALI,N. and HARRISON,I., 1990. A dynamic SIMS study of interdiffusion in GaAs/AlAs heterostructures III-V Review. 3, 16-
HARRISON, I., 1990. Modelling of the Generation of Ga Interstitials during the diffusion of Zn into GaAs International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 3, 91- HARRISON, I., 1990. Diffusion induced disorder in AlGaAs/GaAs Journal of Electronic Materials. 19, 21-
HARRISON, I., HO, H.P., TUCK, B., HENINI, M. and HUGHES, O.H., 1989. Zn diffusion-induced disorder in AlAs/GaAs superlattices Semiconductor Science and Technology. 4, 841- AVALDI,L., STEFANI,G., LAHMAN-BENNANI,A., DUGUET,A., HARRISON,I. and KING,G.C., 1989. Near threshold effects in Ar and C0 Auger spectra
HARRISON,I., KING,G.C. and AVALDI,L., 1988. A study of Auger satellite decay from inner-shell states of C0 excited close to threshold In: XIV Summer School and International Symposium on the Physics of ionised gases.
HARRISON, I., KING, G.C. and AVALDI, L., 1988. A study of satellite Auger decay from inner-shell states of C0 excited close to threshold Journal of Physics B: Atomic, Molecular and Optical Physics. 21, 4015-