POLLARD, A. J., NAIR, R. R., SABKI, S. N., STADDON, C. R., PERDIGAO, L. M. A., HSU, C. H., GARFITT, J. M., GANGOPADHYAY, S., GLEESON, H. F., GEIM, A. K. and BETON, P. H., 2009. Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films The Journal of Physical Chemistry C. 113(38), 16565-16567 POLLARD, A.J., NAIR, R.R., SABKI, S.N., STADDON, C.R., PERDIGAO, L.M.A., HSU, C.H., GARFITT, J.M., GANGOPADHYAY, S., GLEESON, H.F. and GEIM, A.K., 2009. Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films. VOL 113(NUMB 38), 16565-16567
NOVIKOV, S. V., STADDON, C. R., AKIMOV, A. V., CAMPION, R. P., ZAINAL, N., KENT, A. J., FOXON, C. T., CHEN, C. H., YU, K. M. and WALUKIEWICZ, W., 2009. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. VOL 311(NUMBER 13), 3417-3422
MOSS, D., AKIMOV, A.V., NOVIKOV, S.V., CAMPION, R.P., STADDON, C.R., ZAINAL, N., FOXON, C.T. and KENT, A.J., 2009. Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics. VOL 42(NUMB 11), 115412
LU, W., LIM, J.J., BULL, S., ANDRIANOV, A.V., STADDON, C., FOXON, C.T., SADEGHI, M., WANG, S.M., LARSSON, A. and LARKINS, E.C., 2009. Independent determination of In and N concentrations in GaInNAs alloys. VOL 24(NUMB 10), 105016
A W RUSHFORTH, M WANG, N R S FARLEY, R C CAMPION, K W EDMONDS, C R STADDON, C T FOXON, B L GALLAGHER, 2008. Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis JOURNAL OF APPLIED PHYSICS. 104, 073908 A. W. RUSHFORTH, N. R. S. FARLEY, R. P. CAMPION, K. W. EDMONDS, C. R. STADDON, C. T. FOXON, B. L. GALLAGHER, AND K. M. YU, 2008. Compositional dependence of ferromagnetism in (Al,Ga,Mn)As magnetic semiconductors PHYSICAL REVIEW B. 78, 085209 FAY, M.W., HAN, Y., NOVIKOV, S.V., EDMONDS, K.W., GALLAGHER, B.L., CAMPION, R.P., STADDON, C.R., FOXON, T. and BROWN, P.D., 2008. 15th. VOL 120, 103-106
HORAK, L., HOLY, V., STADDON, C.R., FARLEY, N.R.S., NOVIKOV, S.V., CAMPION, R.P. and FOXON, C.T., 2008. X-ray in-plane scattering investigation of GaN nanorods (5 pages). VOL 104(NUMB 10), 103504
RUSHFORTH, A.W., FARLEY, N.R.S., CAMPION, R.P., EDMONDS, K.W., STADDON, C.R., FOXON, C.T., GALLAGHER, B.L. and YU, K.M., 2008. Compositional dependence of ferromagnetism in (Al,Ga,Mn)As magnetic semiconductors (6 pages). VOL 78(NUMB 8), 085209
FAY, M.W., HAN, Y., NOVIKOV, S.V., EDMONDS, K.W., GALLAGHER, B.L., CAMPION, R.P., STADDON, C.R., FOXON, T. and BROWN, P.D., 2008. Nanoscale Characterisation of MBE-Grown GaMnN/(001) GaAs. VOL 120, 103-106
RUSHFORTH, A.W., WANG, M., FARLEY, N.R.S., CAMPION, R.P., EDMONDS, K.W., STADDON, C.R., FOXON, C.T. and GALLAGHER, B.L., 2008. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis (3 pages). VOL 104(NUMB 7), 073908
WANG, K. Y., RUSHFORTH, A. W., GRANT, V. A., CAMPION, R. P., EDMONDS, K. W., STADDON, C. R., FOXON, C. T., GALLAGHER, B. L., WUNDERLICH, J. and WILLIAMS, D. A., 2007. Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain (3 pages) JOURNAL OF APPLIED PHYSICS. VOL 101(NUMB 10), 106101 HSU, C.H., DENG, J., STADDON, C.R. and BETON, P.H., 2007. Growth front nucleation of rubrene thin films for high mobility organic transistors (3 pages). VOL 91(NUMB 19), 193505
WANG, K. Y., RUSHFORTH, A. W., GRANT, V. A., CAMPION, R. P., EDMONDS, K. W., STADDON, C. R., FOXON, C. T., GALLAGHER, B. L., WUNDERLICH, J. and WILLIAMS, D. A., 2007. Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain (3 pages). VOL 101(NUMB 10), 106101
SAWICKI, M., WANG, K.-Y., EDMONDS, K. W., CAMPION, R. P., STADDON, C. R., FARLEY, N. R. S., FOXON, C. T., DIETL, T. and GALLAGHER, B. L., 2006. In-plane uniaxial anisotropy rotations in (Ga, Mn)As thin films MATERIALS SCIENCE -WROCLAW-. VOL 24(PART 3), 627-632
HAN, Y., FAY, M.W., NOVIKOV, S.V., EDMONDS, K.W., GALLAGHER, B.L., CAMPION, R.P., STADDON, C.R., FOXON, C.T. and BROWN, P.D., 2006. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux Emag-Nano 2005. 179-182 HAN, Y., FAY, M.W., NOVIKOV, S.V., EDMONDS, K.W., GALLAGHER, B.L., CAMPION, R.P., STADDON, C.R., FOXON, C.T. and BROWN, P.D., 2006. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux In: Journal of Physics: Conference Series. 179-182 EDMONDS, K.W., NOVIKOV, S.V., SAWICKI, M., CAMPION, R.P., STADDON, C.R., GIDDINGS, A.D., ZHAO, L.X., WANG, K.Y., DIETL, T., FOXON, C.T. and GALLAGHER B.L., 2005. <i>p</i>-type conductivity in cubic (Ga,Mn)N thin films Applied Physics Letters. VOL 86(NUMB 15), 152114/1-3 SAWICKI, M., WANG, K.-Y., EDMONDS, K. W., CAMPION, R. P., STADDON, C. R., FARLEY, N. R. S., FOXON, C. T., PAPIS, E., KAMINSKA, E. and PIOTROWSKA, A., 2005. In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films (4 pages) PHYSICAL REVIEW -SERIES B-. VOL 71(NUMB 12), 121302(R) ZHAO, L. X., STADDON, C. R., WANG, K. Y., EDMONDS, K. W., CAMPION, R. P., GALLAGHER, B. L. and FOXON, C. T., 2005. Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs (3 pages) Applied Physics Letters. VOL 86(NUMB 7), 071902 FOXON, C. T., NOVIKOV, S. V., ZHAO, L. X., EDMONDS, K. W., GIDDINGS, A. D., WANG, K. Y., CAMPION, R. P., STADDON, C. R., FAY, M. W. and HAN, Y., 2005. Molecular beam epitaxy of p-type cubic GaMnN layers Journal of Crystal Growth. VOL 278(NUMBER 1-4), 685-689 ZHAO, L.X., CAMPION, R.P., FEWSTER, P.F., MARTIN, R.W., BER, B.Y., KOVARSKY, A.P., STADDON, C.R., WANG, K.Y., EDMONDS, K.W., FOXON, C.T. and GALLAGHER, B.L., 2005. Determination of the Mn concentration in GaMnAs Semiconductor Science and Technology. VOL 20(NUMB 5), 369-373 MARTINEZ, C. E., STANTON, N. M., KENT, A. J., STADDON, C. R., NOVIKOV, S. V. and FOXON, C. T., 2004. Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices Journal of Applied Physics. VOL 95(PART 12), 7785-7789 NOVIKOV, S.V., EDMONDS, K.W., GIDDINGS, A.D., WANG, K.Y., STADDON, C.R., CAMPION, R.P., GALLAGHER, B.L. and FOXON, C.T., 2004. <I>P</I>-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy Semiconductor Science and Technology. 19(3), L13-L16 FOXON, C. T., CAMPION, R. P., EDMONDS, K. W., ZHAO, L., WANG, K., FARLEY, N. R., STADDON, C. R. and GALLAGHER, B. L., 2004. The growth of high quality GaMnAs films by MBE Journal of Materials Science: Materials in Electronics. VOL 15(NUMBER 11), 727-731 CAMPION, R.P., EDMONDS, K.W., ZHAO, L.X., WANG, K.Y., FOXON, C.T., GALLAGHER, B.L. and STADDON, C.R., 2003. High-quality GaMnAs films grown with arsenic dimers Journal of Crystal Growth. 247(1-2), 42-48 CAMPION, R. P., EDMONDS, K. W., ZHAO, L. X., WANG, K. Y., FOXON, C. T., GALLAGHER, B. L. and STADDON, C. R., 2003. The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers Journal of Crystal Growth. VOL 251(NUMBER 1-4), 311-316 FOXON, C. T., HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., WINSER, A. J., KOVARSKY, A. P. and BER, B. J., 2002. The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules Journal of Crystal Growth. VOL 234(NUMBER 2-3), 343-348 NOVIKOV, S. V., WINSER, A. J., BELL, A., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., PONCE, F. A. and FOXON, C. T., 2002. The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy Journal of Crystal Growth. VOL 240(NUMBER 3-4), 423-430 LI, T., STADDON, C. R., NOVIKOV, S. V., FEWSTER, P. F., WIDDOWSON, A., ANDREW, N. L., KIDD, P., HARRISON, I., WINSER, A. and LIAO, Y., 2002. X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. VOL 235(NUMBER 1-4), 103-110 CZERWINKA, P. S., KING, P. J., MISAT, S., CAMPION, R. P., STADDON, C. R. and VILLEGIER, J. C., 2002. Vortex-related phase-transition-like behavior in the electrical properties of c-axis normal and vicinal YBa~2Cu~3O~7~-~d~e~l~t~a films Physical Review B: Condensed Matter. VOL 65(PART 18), 184509 HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., LIAO, Y., WINSER, A. J. and FOXON, C. T., 2001. On the Origin of Blue Emission from As-Doped GaN Physica Status Solidi B: Basic Research. VOL 228(PART 1), 213-217 NOVIKOV, S. V., LI, T., WINSER, A. J., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I. and FOXON, C. T., 2001. Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System Physica Status Solidi B: Basic Research. VOL 228(NO 1), 223-225 FOXON, C. T., NOVIKOV, S. V., LIAO, Y., WINSER, A. J., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R. and DAVIS, C. S., 2001. The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy Physica Status Solidi B: Basic Research. VOL 228(NO 1), 203-206 NOVIKOV, S. V., LI, T., WINSER, A. J., FOXON, C. T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I., KOVARSKY, A. P. and BER, B. J., 2001. The Influence of Arsenic Incorporation on the Optical Properties of As-Doped GaN Films Grown by Molecular Beam Epitaxy Using Arsen Physica Status Solidi B: Basic Research. VOL 228(NO 1), 227-229 FEWSTER, P. F., ANDREW, N. L., HUGHES, O. H., STADDON, C., FOXON, C. T., BELL, A., CHENG, T. S., WANG, T., SAKAI, S. and JACOBS, K., 2000. X-ray studies of group III-nitride quantum wells with high quality interfaces Journal of Vacuum Science and Technology. Part B Microelectronics and Nanometer Structures. VOL 18(PART 4), 2300-2303 STANTON, N.M., KENT, A.J., HAWKER, P., CHENG, T.S., FOXON, C.T., KORAKAKIS, D., CAMPION, R.P., STADDON, C.R. and MIDDLETON, J.R., 1999. Photoenhanced wet chemical etching of MBE grown gallium nitride Materials Science and Engineering B: Solid-State Materials for Advanced Technology. VOL 68(NUMBER 1), 52 - 55