New facility will support development of 2D semiconductors

Posted on Monday 23rd January 2023

Researchers in the Schools of Physics and Astronomy at the University of Nottingham have completed the installation of a new facility (EPI2SEM) for the EPItaxial growth and in-situ analysis of two-dimensional (2d) SEMiconductors.

The EPI2SEM facility is supported by Nottingham and an EPSRC Strategic Equipment Award. It will provide the UK and international community with a unique capability for the transformative miniaturization and functionalization of semiconductors, supporting a wide-ranging programme of fundamental science and application-driven research.

The EPI2SEM is a bespoke facility in Ultra-High Vacuum (UHV). It consists of a chamber for the synthesis of atomically thin 2d semiconductors by molecular beam epitaxy (MBE), a second chamber for band structure and chemical analysis by electron spectroscopy (nanoESCA), and a third chamber for morphological studies by scanning probe microscopy (SPM). All modules are interconnected in UHV by a linear transfer line (LTL), providing integrated sample transfer between growth and analysis chambers without contamination of the grown materials. 2d semiconductors with controlled layer thickness, composition and interfaces will provide a platform to reveal a rich variety of new quantum phenomena for science and technologies. These hold promise to revolutionize different sectors ranging from communication to computing and security towards a second quantum revolution.

For further information please contact Professor Amalia Patane.

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