New facility will support development of 2D semiconductors

Researchers in the Schools of Physics and Astronomy at the University of Nottingham have completed the installation of a new facility (EPI2SEM) for the EPItaxial growth and in-situ analysis of two-dimensional (2d) SEMiconductors.

The EPI2SEM facility is supported by Nottingham and an EPSRC Strategic Equipment Award. It will provide the UK and international community with a unique capability for the transformative miniaturization and functionalization of semiconductors, supporting a wide-ranging programme of fundamental science and application-driven research.

The EPI2SEM is a bespoke facility in Ultra-High Vacuum (UHV). It consists of a chamber for the synthesis of atomically thin 2d semiconductors by molecular beam epitaxy (MBE), a second chamber for band structure and chemical analysis by electron spectroscopy (nanoESCA), and a third chamber for morphological studies by scanning probe microscopy (SPM). All modules are interconnected in UHV by a linear transfer line (LTL), providing integrated sample transfer between growth and analysis chambers without contamination of the grown materials. 2d semiconductors with controlled layer thickness, composition and interfaces will provide a platform to reveal a rich variety of new quantum phenomena for science and technologies. These hold promise to revolutionize different sectors ranging from communication to computing and security towards a second quantum revolution.

For further information please contact Professor Amalia Patane.