Ke Li

Contact

• workPEMC building
  Jubilee Campus
  Wollaton Road
  Nottingham
  NG8 1BB
  UK
• Ke.Li2@nottingham.ac.uk

Biography

I received the PhD degree in electrical engineering from University of Lille, France, in 2014. After my PhD, I have worked as Research Fellow in Power Electronics, Machines and Control (PEMC) Group, the University of Nottingham until Dec.2019. Afterwards, I was appointed as Assistant Professor in Power Electronics, Machines and Drives in Coventry University. In Sept. 2022, I came back to the University of Nottingham and joined the Department of Electrical and Electronic Engineering and PEMC group as Assistant Professor. Since 2019, I have been serving as IEEE Vehicle Power Propulsion technical committee member for the promotion of new technologies for low emission vehicles.

Expertise Summary

My expertise is to develop high-efficiency, high-power-density and high-reliability power electronics systems for sustainable electrical energy conversion and Net Zero. It includes three areas: 1) The electro-thermal characterisation of the power semiconductor devices and power modules. 2) The electro-thermal and electromagnetic modelling and simulation of the power electronics circuit. 3) The application and reliability of silicon and wide bandgap semiconductor device and module for transportation electrification.

Teaching Summary

I teach following modules:

• EEEE2044: Electronic Processing and Communications
• EEEE2046: Practical Engineering Design Solutions and Project Development
• EEEE4109: MEng Group Project
• EEEE3001: BEng Individual Project
• EEEE4008: MEng Industrial/Research Orientated Project

Research Summary

My current research includes:

• The electro-thermal characterisation of the power semiconductor devices and power modules.
• The electro-thermal and electromagnetic modelling and simulation of the power electronics circuit.
• The application and reliability of silicon and wide bandgap (SiC, GaN) semiconductor device and module for transportation electrification.

Recent Publications

• KE LI, PAUL LEONARD EVANS, CHRISTOPHER MARK JOHNSON, ARNAUD VIDET and NADIR IDIR, 2021. A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters Energies. 14(8), 2092
• GAO, XINNING, EVANS, PAUL, JOHNSON, MARK and LI, KE, 2021. Multi Expansion Point Reduced Order Modelling for Electromagnetic Design of Power Electronics In: 2021 IEEE Design Methodologies Conference (DMC). 1-6
• LI, KE, VIDET, ARNAUD, IDIR, NADIR, EVANS, PAUL LEONARD and JOHNSON, CHRISTOPHER MARK, 2020. Accurate Measurement of Dynamic ON-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter IEEE TRANSACTIONS ON POWER ELECTRONICS. 35(9), 9650-9660
• YANG, L., LI, K., DAI, J., CORFIELD, M., HARRIS, A., PACIURA, K., O'BRIEN, J. and JOHNSON, C.M., 2018. Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors IEEE Transactions on Power Electronics.

• View all publications

• KE LI, PAUL LEONARD EVANS, CHRISTOPHER MARK JOHNSON, ARNAUD VIDET and NADIR IDIR, 2021. A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters Energies. 14(8), 2092
• GAO, XINNING, EVANS, PAUL, JOHNSON, MARK and LI, KE, 2021. Multi Expansion Point Reduced Order Modelling for Electromagnetic Design of Power Electronics In: 2021 IEEE Design Methodologies Conference (DMC). 1-6
• LI, KE, VIDET, ARNAUD, IDIR, NADIR, EVANS, PAUL LEONARD and JOHNSON, CHRISTOPHER MARK, 2020. Accurate Measurement of Dynamic ON-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter IEEE TRANSACTIONS ON POWER ELECTRONICS. 35(9), 9650-9660
• YANG, L., LI, K., DAI, J., CORFIELD, M., HARRIS, A., PACIURA, K., O'BRIEN, J. and JOHNSON, C.M., 2018. Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors IEEE Transactions on Power Electronics.
• LI, KE, EVANS, PAUL and JOHNSON, MARK, 2018. SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions IET ELECTRICAL SYSTEMS IN TRANSPORTATION. 8(1), 3-11
• LI, KE., EVANS, P. and JOHNSON, C.M., 2018. Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance IEEE Transactions on Power Electronics. 33(6), 5262 - 5273