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Mohamed Henini

Professor of Applied Physics, Faculty of Science

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Research Summary

My main research focuses on the physics and technology of Molecular Beam Epitaxy (MBE) growth for III-V electronic and optoelectronic devices. I have particular interests in MBE growth on high-index… read more

Recent Publications

Current Research

My main research focuses on the physics and technology of Molecular Beam Epitaxy (MBE) growth for III-V electronic and optoelectronic devices. I have particular interests in MBE growth on high-index planes, two-dimensional systems and in self-assembled quantum dots. The semiconductor materials systems of interest include: (Ga,Al,In)(As,N) and GaAsBi . I am also interested in the study of electrically active defects (known as traps) in semiconductors. Deep Level Transient Spectroscopy (DLTS), which is a unique and powerful tool to study deep levels in semiconductors, is used to investigate a variety of semiconductor systems. For more details see the semiconductor physics web pages

Teaching and Administration:

  • International Postgraduate Admissions Tutor
  • International Postgraduate Recruitment
  • Midlands Physics Alliance Graduate School (MPAGS)- Placement Officer
  • First Year Course Co-Organiser
  • Committee Membership: • School Management Group • Postgraduate Committee • Diversity Committee • Learning Community Forum • Teachers Advisory Board
  • F34SP3 Materials, Microstructures and Microscopy
  • F33SR3 Communication Skills
  • F31YL1 Practical Physics

School of Physics and Astronomy

The University of Nottingham
University Park
Nottingham NG7 2RD

telephone: +44 [0]115 951 5183
fax: +44 [0]115 951 5180
email: physics-enquiries@nottingham.ac.uk