Mohamed Henini
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Professor of Applied Physics
School of Physics & Astronomy, Faculty of Science Role(s): Academic |
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Room C129 Physics & Maths University Park NG7 2RD T: 0115 951 5195 F: 0115 951 5180 mohamed.henini@nottingham.ac.uk Personal homepage |
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Current research |
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My main research focuses on the physics and technology of Molecular Beam Epitaxy (MBE) growth for III-V electronic and optoelectronic devices. I have particular interests in MBE growth on high-index planes, two-dimensional systems and in self-assembled quantum dots. The semiconductor materials systems of interest include: (Ga,Al,In)(As,N) and GaAsBi . I am also interested in the study of electrically active defects (known as traps) in semiconductors. Deep Level Transient Spectroscopy (DLTS), which is a unique and powerful tool to study deep levels in semiconductors, is used to investigate a variety of semiconductor systems.
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