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Image of Laurence Eaves CBE FRS

Laurence Eaves CBE FRS

Research Professor, Faculty of Science

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Research Summary

The physics and applications of semiconductor materials and devices. The interface between classical and quantum physics, particularly regarding the subject of chaotic dynamics. Novel applications of… read more

Recent Publications

Current Research

The physics and applications of semiconductor materials and devices. The interface between classical and quantum physics, particularly regarding the subject of chaotic dynamics. Novel applications of high magnetic fields in physics, chemistry, biochemistry and nanoscience. These experimental projects involve the use of high magnetic fields, low temperatures, and high-precision electrical and optical spectroscopy techniques.

In collaboration with colleagues at the University of Manchester, studies of the electronic properties of graphene-boron nitride tunnel transistors.

For further details of my research, please see http://www.nottingham.ac.uk/~ppzphy17/ and http://www.nottingham.ac.uk/~ppzlev/ .

Past Research

Inverted Bistability in the Current-Voltage Characteristics of a Resonant Tunneling Device M. L. Leadbeater, L. Eaves, M. Henini, O. H. Hughes, G. Hill and M. A. Pate Solid-State Electronics Vol. 32, No. 12, pp. 1461-1471, 1989

Magnetic Field Studies of Negative Differential Conductivity in Double Barrier Resonant Tunnelling Structures Based on n-InP/(InGa)As M.L. Leadbeater*, L. Eaves*, P.E. Simmonds*, G.A. Toombs*, F.W. Sheard*, P.A. Claxton+, G. Hill+ and M.A. Pate+, *Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K. +Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, 51 3JD, U.K. Solid-State Electronics Vol. 31, No. 314, pp. 107-710, 1988

Electrical and Spectroscopic Studies of Space-Charge Buildup, Energy Relaxation nd Magnetically Enhanced Bistability in Resonant Tunneling Structures L. Eaveso, M. L. Leadbeatero, D. C. Hayeso*, E. S. Alveso, F. W. Sheardo, G. A. Toombso, P. E. Simondso*, M. S. Skolnick*, M. Heninio and 0. H. Hugheso oDepartment of Physics, University of Nottingham, Nottingham NG7 2RD, England. *RSRE, St. Andrews Road, Great Malvern, Worcestershire WRl4 3PS, England Solid-State Electronics Vol. 32, No. 12, pp. 1101-1108, 1989

School of Physics and Astronomy

The University of Nottingham
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Nottingham NG7 2RD

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