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Sergei Novikov

Professor of Physics, Faculty of Science

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Research Summary

The main area of my research during my employment at Nottingham is plasma-assisted molecular beam epitaxy (PA-MBE) of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers… read more

Recent Publications

Current Research

The main area of my research during my employment at Nottingham is plasma-assisted molecular beam epitaxy (PA-MBE) of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers of wurtzite and zinc-blende polytypes on different substrates, n-and p-doping of III-Nitrides, isoelectronic doping of III-Nitrides, superlattices and RTD structures in III-Nitrides. We discovered a novel method of growing cubic (zinc-blende) GaN using a co-impinging arsenic flux. We have shown for the first time that it is possible to use MBE to grow free-standing zinc-blende and wurtzite GaN and AlGaN layers for use as substrates. We have discovered amorphous GaNAs, GaNSb & GaNBi alloys, a new class of semiconductor materials for solar energy conversion. Recently, with the help of the EPSRC and support from the University of Nottingham we created the first UK MBE facility for the growth of graphene and boron nitride (BN) at extremely high epitaxial temperatures.

Past Research

My areas of expertise are in molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) of III-V semiconductor layers and nanostructures. I have experience in the epitaxy of practically all III-V semiconductor compounds and alloys using plasma-assisted MBE or LPE. Co-author of >250 papers, contribution to books, patents, reports on conferences.

School of Physics and Astronomy

The University of Nottingham
University Park
Nottingham NG7 2RD

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