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Sergei Novikov

Principal Research Fellow, Faculty of Science

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Research Summary

The main areas of my research during my employment at Nottingham were plasma-assisted MBE and AES of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers of wurtzite and… read more

Recent Publications

  • SALES, DL, GUERRERO, E, RODRIGO, JF, GALINDO, PL, YANEZ, A, SHAFI, M, KHATAB, A, MARI, RH, HENINI, M, NOVIKOV, S, CHISHOLM, MF and MOLINA, SI, 2011. Distribution Of Bismuth Atoms In Epitaxial Gaasbi Applied Physics Letters. 98(10), -
  • LEVANDER, AX, NOVIKOV, SV, LILIENTAL-WEBER, Z, DOS REIS, R, DENLINGER, JD, WU, JQ, DUBON, OD, FOXON, CT, YU, KM and WALUKIEWICZ, W, 2011. Growth And Transport Properties Of P-Type Ganbi Alloys Journal Of Materials Research. 26(23), 2887-2894
  • LEVANDER, A.X., NOVIKOV, S.V., LILIENTAL-WEBER, Z., DOS REIS, R., DUBON, O.D., WU, J., FOXON, C.T., YU, K.M. and WALUKIEWICZ, W., 2011. Doping of GaN1−xAsx with high As content Journal of Applied Physics. 110(9), 093702
  • POWELL, REL, NOVIKOV, SV, LUCKERT, F, EDWARDS, PR, AKIMOV, AV, FOXON, CT, MARTIN, RW and KENT, AJ, 2011. Carrier Localization And Related Photoluminescence In Cubic Algan Epilayers Journal Of Applied Physics. 110(6), 063517

Current Research

The main areas of my research during my employment at Nottingham were plasma-assisted MBE and AES of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers of wurtzite and zinc-blende polytypes on different substrates, n-and p-doping of III-Nitrides, isoelectronic doping of III-Nitrides, superlattices and RTD structures in III-Nitrides and recently manganese doping of III-Nitrides for spintronics.

Past Research

My areas of expertise are in molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) of III-V semiconductor layers and nanostructures. I have experience in the epitaxy of practically all III-V semiconductor compounds and alloys using plasma-assisted MBE or LPE. The main areas of my research interests are: - MBE growth of group III-Nitrides; - MBE growth of arsenic doped group III-Nitrides; - MBE growth of manganese doped group III-Nitrides for spintronics; - Auger Electron Spectroscopy (AES) of group III-Nitrides, III-V spintronic materials and other III-V semiconductors, - isoelectronic and rare-earth elements doping of III-V layers in MBE and LPE; - liquid phase electroepitaxy (LPEE) of III-V layers and bulk crystals. Co-author of >250 papers, contribution to books, patents, reports on conferences.

School of Physics and Astronomy

The University of Nottingham
University Park
Nottingham NG7 2RD

telephone: +44 [0]115 951 5183
fax: +44 [0]115 951 5180
email: physics-enquiries@nottingham.ac.uk