Browser does not support script.
Principal Research Fellow, Faculty of Science
The main areas of my research during my employment at Nottingham were plasma-assisted MBE and AES of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers of wurtzite and… read more
The main areas of my research during my employment at Nottingham were plasma-assisted MBE and AES of group III-Nitrides. We have studied plasma-assisted MBE growth of GaAlInN layers of wurtzite and zinc-blende polytypes on different substrates, n-and p-doping of III-Nitrides, isoelectronic doping of III-Nitrides, superlattices and RTD structures in III-Nitrides and recently manganese doping of III-Nitrides for spintronics.
My areas of expertise are in molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) of III-V semiconductor layers and nanostructures. I have experience in the epitaxy of practically all III-V semiconductor compounds and alloys using plasma-assisted MBE or LPE. The main areas of my research interests are: - MBE growth of group III-Nitrides; - MBE growth of arsenic doped group III-Nitrides; - MBE growth of manganese doped group III-Nitrides for spintronics; - Auger Electron Spectroscopy (AES) of group III-Nitrides, III-V spintronic materials and other III-V semiconductors, - isoelectronic and rare-earth elements doping of III-V layers in MBE and LPE; - liquid phase electroepitaxy (LPEE) of III-V layers and bulk crystals. Co-author of >250 papers, contribution to books, patents, reports on conferences.
The University of NottinghamUniversity Park
Nottingham NG7 2RD
telephone: +44 115 951 5183
fax: +44 115 951 5180