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SIMS header 

ToF-SIMS

Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) uses a pulsed primary ion beam (Bin+ Cs+, Arn+, etc.) to impact on a sample surface and induce a fragmentation cascade. The result is the desorption of neutrals, secondary ions (+/-) and electrons from the first few monolayers of the sample. The secondary ions can then be accelerated into a "flight tube" and their mass is determined by measuring the exact time at which they reach the detector (i.e. time-of-flight).

A single secondary ion mass spectrum can be used to describe the constituents of one point on a surface. Alternatively, if the incident beam is rastered across several points within a given surface area, it is possible to build a chemical image map of that surface. By using incident ions such as Cs+ and Arn+ in a dual beam approach it is also possible to sputter through the top layers of the inorganic or organic surfaces respectively while monitoring the incidence profile of elemental or molecular species (i.e. depth profiling).

ToFSIMS
 

ToF-SIMS zoom 2

Key Features

  • Samples analysed under ultra high vacuum. 
  • A 5-axis multi-sample stage that is fully automated and can accommodate a variety of sample types and sizes ranging, from a few mm up to ~ 10 cm. 
  • Liquid metal (Bin+) ion gun (LMIG) for spectrometry, reflectron ToF mass analyser with mass resolving power  > 9,000 at m/z = 29.
  • Imaging of surface areas from the µm to cm scale, spatial resolution of ~ 200 nm.
  • 3D chemical characterisation and mapping. Argon gas cluster source for high-resolution (1-2 nm) depth profiling of organic materials (polymers and biological samples) and Cs and O beams for profiling of hard materials
  • Gallium FIB can provide high-efficiency milling to create exposed cross-sections for in situ chemical mapping. 
  • Rotational sample holder for analysis of cylindrical samples (the bullet stage). 
  • Allows analysis of a wide range of material types (polymers, metals, biomaterials, tissues, pharmaceuticals etc.), including conductors, semi-conductors and insulators.